EFFECT OF LASER-LIGHT ON N-GAAS PHOTOETCHING

被引：4

作者：

SVORCIK, V

RYBKA, V

机构：

[1] Department of Electronics Materials, Institute of Chemical Technology, Prague 6

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 01期

关键词：

81.60; 82.65;

D O I：

10.1007/BF00324466

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The etching of n-GaAs in aqueous solutions of hydroxides stimulated by HeNe and HeCd laser light was studied. It was found that at low laser-power densities (5-10 W · cm-2) the etched depths do not depend on the wavelength of the incident light. This conclusion is related to the concentration of the photogenerated holes on the semiconductor surface. The diffusion length and absorption depths for HeNe and HeCd lasers are compared. © 1990 Springer-Verlag.

引用

页码：61 / 63

页数：3

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