CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE

被引：120

作者：

BROZEL, MR ^{[1
]}

CLEGG, JB ^{[1
]}

NEWMAN, RC ^{[1
]}

机构：

[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 09期

关键词：

D O I：

10.1088/0022-3727/11/9/010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1331 / 1339

页数：9

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