CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE

被引：120

作者：

BROZEL, MR ^{[1
]}

CLEGG, JB ^{[1
]}

NEWMAN, RC ^{[1
]}

机构：

[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 09期

关键词：

D O I：

10.1088/0022-3727/11/9/010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1331 / 1339

页数：9

相关论文

共 27 条

[1] AKKERMAN ZL, 1976, SOV PHYS SEMICOND+, V10, P590
[2] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[3] LOCALIZED VIBRATIONAL MODES OF INTERSTITIAL OXYGEN AND OXYGEN COMPLEXES IN GAP
BARKER, AS
BERMAN, R
VERLEUR, HW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (01) : 123 - 132
[4] CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE
BLACKMORE, GW
CLEGG, JB
HISLOP, JS
MULLIN, JB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 401 - 413
[5] CLEGG JB, 1974, PHILIPS TECH REV, V34, P344
[6] COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024
[7] GRIMM A, 1975, 23 I PHYS C P, P332
[8] GROWTH OF THICK LIQUID-PHASE EPITAXIAL GAAS-SI LAYERS AND THEIR CHARACTERIZATION
KACHARE, AH
SPITZER, WG
WHELAN, JM
NARAYANAN, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 5022 - 5029
[9] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE
LAITHWAITE, K
NEWMAN, RC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24): : 4503 - 4510
[10] DETECTION OF STRAIN IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE FROM LOCAL MODE ABSORPTION-MEASUREMENTS
LAITHWAITE, K
NEWMAN, RC
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (06): : 1689 - 1695