USE OF A PI-PHASE SHIFTING X-RAY MASK TO INCREASE THE INTENSITY SLOPE AT FEATURE EDGES

被引：51

作者：

KU, YC

ANDERSON, EH

SCHATTENBURG, ML

SMITH, HI

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,CTR SPACE RES,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：150 / 153

页数：4

共 11 条

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[8] FABRICATION OF SUB-100-NM LINEWIDTH PERIODIC STRUCTURES FOR STUDY OF QUANTUM EFFECTS FROM INTERFERENCE AND CONFINEMENT IN SI INVERSION-LAYERS [J].

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[9]

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[10] HIGH-RESOLUTION X-RAY-LITHOGRAPHY USING A PHASE MASK [J].

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