STRAINED QUATERNARY QUANTUM-WELL LASERS FOR HIGH-TEMPERATURE OPERATION

被引：26

作者：

TEMKIN, H ^{[1
]}

COBLENTZ, D ^{[1
]}

LOGAN, RA ^{[1
]}

VANDENBERG, JM ^{[1
]}

YADVISH, RD ^{[1
]}

SERGENT, AM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe compressively strained separate confinement heterostructure 1.3 mum quantum well lasers optimized for high temperature operation. The active layer consists of ten GaInAsP wells, each 40-80 angstrom thick, grown under compressive lattice mismatch strain of DELTAa/a less-than-or-equal-to 0.75%. Within the constraints of the well composition and thickness imposed on the active region, strain is necessary for efficient laser operation. Best results are obtained for DELTAa/a approximately 0.2%-0.3% with the laser threshold as low as 5 mA and slope efficiency of 42 mW/mA. In the temperature range of 25-85-degrees-C a slope efficiency change as small as 30% was achieved. Power output of at least 20 mW can be maintained up to 100-degrees-C at a current drive below 150 mA.

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页码：2321 / 2323

页数：3

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