INALP/INALGAP DISTRIBUTED BRAGG REFLECTORS FOR VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引:19
作者
SCHNEIDER, RP
LOTT, JA
机构
[1] Sandia National Laboratories, Albuquerque
关键词
D O I
10.1063/1.109249
中图分类号
O59 [应用物理学];
学科分类号
摘要
Distributed Bragg reflectors (DBRs) composed of In0.5Al0.5P/In0.5(AlyGa1-y)0.5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0 less-than-or-equal-to y less-than-or-equal-to 0.6) and peak reflectivity wavelength (720 nm less-than-or-equal lambda less-than-or-equal-to 565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of lambda is similar to 670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.
引用
收藏
页码:2748 / 2750
页数:3
相关论文
共 16 条
[1]   VISIBLE, ROOM-TEMPERATURE, SURFACE-EMITTING LASER USING AN EPITAXIAL FABRY-PEROT RESONATOR WITH ALGAAS/ALAS QUARTER-WAVE HIGH REFLECTORS AND ALGAAS/GAAS MULTIPLE QUANTUM-WELLS [J].
GOURLEY, PL ;
DRUMMOND, TJ .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1225-1227
[2]   ENHANCED SPECTRAL POWER-DENSITY AND REDUCED LINEWIDTH AT 1.3-MU-M IN AN INGAASP QUANTUM-WELL RESONANT-CAVITY LIGHT-EMITTING DIODE [J].
HUNT, NEJ ;
SCHUBERT, EF ;
LOGAN, RA ;
ZYDZIK, GJ .
APPLIED PHYSICS LETTERS, 1992, 61 (19) :2287-2289
[3]   SURFACE EMITTING SEMICONDUCTOR-LASERS [J].
IGA, K ;
KOYAMA, F ;
KINOSHITA, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855
[4]   VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION [J].
JEWELL, JL ;
HARBISON, JP ;
SCHERER, A ;
LEE, YH ;
FLOREZ, LT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1332-1346
[5]   GAAS/GAALAS SURFACE EMITTING IR LED WITH BRAGG REFLECTOR GROWN BY MOCVD [J].
KATO, T ;
SUSAWA, H ;
HIROTANI, M ;
SAKA, T ;
OHASHI, Y ;
SHICHI, E ;
SHIBATA, S .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :832-835
[6]   HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].
KRIJN, MPCM .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31
[7]  
LOTT JA, IN PRESS PHOTON TECH
[8]  
Macleod H. A., 1989, THIN FILM OPTICAL FI
[9]   VISIBLE (657 NM) INGAP/INALGAP STRAINED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER [J].
SCHNEIDER, RP ;
BRYAN, RP ;
LOTT, JA ;
OLBRIGHT, GR .
APPLIED PHYSICS LETTERS, 1992, 60 (15) :1830-1832
[10]   PHOTOLUMINESCENCE LINEWIDTHS IN METALORGANIC VAPOR-PHASE EPITAXIALLY GROWN ORDERED AND DISORDERED INALGAP ALLOYS [J].
SCHNEIDER, RP ;
JONES, ED ;
LOTT, JA ;
BRYAN, RP .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) :5397-5400