DEEP-LEVEL TRANSIENT SPECTROSCOPY ON P-TYPE SILICON-CRYSTALS CONTAINING TUNGSTEN IMPURITIES

被引：9
|
作者：
ANDO, T [1 ]
ISOMAE, S [1 ]
MUNAKATA, C [1 ]
ABE, T [1 ]
机构：
[1] SHIN ETSU HANDOTAI CO LTD,SEH ISOBE RES & DEV CTR,ANNAKA,GUNMA 37901,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期
关键词：
D O I：
10.1063/1.350196
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten impurities in the substrates. Similar hole traps are also found in different silicon substrates in which tungsten impurities are thermally diffused from the surface. These facts indicate that the hole traps are truly due to tungsten impurities.
引用
收藏
页码：5401 / 5403
页数：3
相关论文
共 50 条
  • [1] A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice
    Simoen, Eddy
    Jayachandran, Suseendran
    Delabie, Annelies
    Caymax, Matty
    Heyns, Marc
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (04):
  • [2] APPLICATION OF CURRENT-SCANNING DEEP-LEVEL TRANSIENT SPECTROSCOPY TO DEFORMED SILICON-CRYSTALS - FIRST RESULTS
    KREIS, J
    ALEXANDER, H
    SCANNING, 1993, 15 (06) : 338 - 342
  • [3] Electron traps in P-type GaAsN characterized by deep-level transient spectroscopy
    Johnston, SW
    Kurtz, S
    Friedman, DJ
    Ptak, AJ
    Ahrenkiel, RK
    Crandall, RS
    CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 599 - 602
  • [4] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF HOLE TRAPS IN P-TYPE CDTE
    SZATKOWSKI, J
    PLACZEKPOPKO, E
    HAJDUSIANEK, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (39) : 7935 - 7940
  • [5] A STUDY OF GROWN-IN IMPURITIES IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    ROHATGI, A
    DAVIS, JR
    HOPKINS, RH
    MCMULLIN, PG
    SOLID-STATE ELECTRONICS, 1983, 26 (11) : 1039 - &
  • [6] Deep-level transient spectroscopy characterization of electrical traps in p-type multicrystalline silicon with gettering and hydrogenation process
    Zheng, Xiong
    Zhou, Chunlan
    Jia, Xiaojie
    Jia, Endong
    Wang, Wenjing
    SOLAR ENERGY, 2018, 162 : 372 - 377
  • [7] RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS
    POGGI, A
    SUSI, E
    BUTTURI, MA
    CAROTTA, MC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (03) : 754 - 758
  • [8] Compensating levels in p-type ZnSe:N studied by optical deep-level transient spectroscopy
    Wang, SQ
    Lu, F
    Zhu, ZQ
    Sekiguchi, T
    Okushi, H
    Kimura, K
    Yao, T
    PHYSICAL REVIEW B, 1998, 58 (16) : 10502 - 10509
  • [9] Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy
    Nakamura, Minoru
    Murakami, Susumu
    Udono, Haruhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (09)
  • [10] Photothermal deep-level transient spectroscopy of impurities and defects in semiconductors
    Mandelis, A
    Budiman, A
    Vargas, M
    EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS : OPTICAL AND PHOTOTHERMAL CHARACTERIZATION, 1997, 46 : 179 - 211
12345