OPTICAL-ABSORPTION EDGES OF COMPOUND SEMICONDUCTORS IN ZNSIP2-ZNSIAS2 RANGE

被引：15

作者：

CLARK, WC ^{[1
]}

STROUD, RF ^{[1
]}

机构：

[1] UNIV BATH,SCH PHYS,BATH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 13期

关键词：

D O I：

10.1088/0022-3719/6/13/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2184 / 2190

页数：7

共 16 条

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[2] OPTICAL PROPERTIES OF II-IV-V2 AND I-III-VI2 CRYSTALS WITH PARTICULAR REFERENCE TO TRANSMISSION LIMITS [J].

BHAR, GC ;

SMITH, RC .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01) :157-+

[3]

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[4]

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[5] OPTO-ELECTRONIC PROPERTIES OF MERCURIC IODIDE [J].

BUBE, RH .

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[6] NEW GROUP OF COMPOUNDS WITH DIAMOND-TYPE (CHALCOPYRITE) STRUCTURE [J].

GOODMAN, CHL .

NATURE, 1957, 179 (4564) :828-829

[7]

GORYUNOVA NA, 1966, IAN SSSR NEORG MATER, V2, P2125

[8]

KAHAN A, 1964, APPL OPTICS, V3, P314

[9] SHARP-LINE PHOTOLUMINESCENCE IN ZNSIP2 [J].

NAHORY, RE ;

SHAH, J ;

LEITE, RCC ;

BUEHLER, E ;

WERNICK, JH .

PHYSICAL REVIEW B, 1970, 1 (12) :4677-&

[10]

PANKOVE JI, 1965, PHYS REV, V140, P2059

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