ION-BEAM SYNTHESIS OF CUBIC FESI2

被引：56

作者：

DESIMONI, J ^{[1
]}

BERNAS, H ^{[1
]}

BEHAR, M ^{[1
]}

LIN, XW ^{[1
]}

WASHBURN, J ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.108969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cubic FeSi2 precipitates were synthesized in Si (100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320-degrees-C. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si ( 100) matrix.

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页码：306 / 308

页数：3

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