RELAXATION OF COHERENT STRAIN IN SI1-XGEX/SI SUPERLATTICES AND ALLOYS

被引:9
作者
HAUENSTEIN, RJ [1 ]
MILES, RH [1 ]
CROKE, ET [1 ]
MCGILL, TC [1 ]
机构
[1] CALTECH,PASADENA,CA 91125
关键词
D O I
10.1016/0040-6090(89)90432-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:79 / 86
页数:8
相关论文
共 10 条
  • [1] X-RAY-DIFFRACTION OF STRAIN RELAXATION IN SI-SI1-XGEX HETEROSTRUCTURES
    BARIBEAU, JM
    SONG, KC
    MUNRO, K
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 323 - 325
  • [2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    FELDMAN, LC
    FIORY, AT
    NAKAHARA, S
    ROBINSON, IK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
  • [3] FREUND LB, 1988, FALL MRS M BOST
  • [4] STRAIN RELAXATION KINETICS IN SI1-XGEX/SI HETEROSTRUCTURES
    HAUENSTEIN, RJ
    CLEMENS, BM
    MILES, RH
    MARSH, OJ
    CROKE, ET
    MCGILL, TC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 767 - 774
  • [5] VARIATION IN MISFIT DISLOCATION BEHAVIOR AS A FUNCTION OF STRAIN IN THE GESI SI SYSTEM
    HULL, R
    BEAN, JC
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (10) : 925 - 927
  • [6] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES
    HULL, R
    BEAN, JC
    CERDEIRA, F
    FIORY, AT
    GIBSON, JM
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58
  • [7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
    MATTHEWS, JW
    BLAKESLEE, AE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125
  • [8] CORRECTION
    PEOPLE, R
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229
  • [9] X-RAY ROCKING CURVE ANALYSIS OF SUPERLATTICES
    SPERIOSU, VS
    VREELAND, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1591 - 1600
  • [10] TUPPEN CG, 1988, 2ND P INT S SIL MOL, P36