EPITAXIAL-GROWTH OF GE FILMS ON GAAS (285-415-DEGREES-C) BY LASER PHOTOCHEMICAL VAPOR-DEPOSITION

被引：17
|
作者：
TAVITIAN, V
KIELY, CJ
GEOHEGAN, DB
EDEN, JG
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期
关键词：
D O I：
10.1063/1.99025
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1710 / 1712
页数：3
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