1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS

被引：96

作者：

SHEN, CC ^{[1
]}

HSIEH, JJ ^{[1
]}

LIND, TA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 07期

关键词：

D O I：

10.1063/1.89397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：353 / 354

页数：2

共 12 条

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[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

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APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[6] LOW-THRESHOLD ROOM-TEMPERATURE DOUBLE-HETEROSTRUCTURE GAAS1-XSBX-ALYGA1-YAS1-XSBX INJECTION LASERS AT 1-MU-M WAVELENGTHS [J].

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[8] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU [J].

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OLSEN, GH .

APPLIED PHYSICS LETTERS, 1975, 26 (09) :528-531

[9] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004

[10] HETEROSTRUCTURE INJECTION-LASERS [J].

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PROCEEDINGS OF THE IEEE, 1976, 64 (10) :1512-1540

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