FIELD-EFFECT TRANSISTOR BASED ON ORGANOMETALLIC LANGMUIR-BLODGETT-FILM

被引：24

作者：

PEARSON, C ^{[1
]}

GIBSON, JE ^{[1
]}

MOORE, AJ ^{[1
]}

BRYCE, MR ^{[1
]}

PETTY, MC ^{[1
]}

机构：

[1] UNIV DURHAM,DEPT CHEM,DURHAM DH1 3LE,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 15期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; LANGMUIR-BLODGETT FILMS; THIN FILMS;

D O I：

10.1049/el:19930922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of a thin film transistor based on a Langmuir-Blodgett film of an organo-metallic charge-transfer material, (N-octadecylpyridinium)-Ni(dmit)2, is reported. Saturation in the source-drain current is observed at large gate voltages. The charge carrier mobility is approximately 0.2 cm2 V-1 s-1 after the organic layer has been doped with iodine.

引用

页码：1377 / 1378

页数：2

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