SILICON-CARBIDE HIGH-VOLTAGE (400 V) SCHOTTKY-BARRIER DIODES

被引：119
|
作者：
BHATNAGAR, M
MCLARTY, PK
BALIGA, BJ
机构：
[1] Power Semiconductor Research Center, North Carolina State University, Raleigh
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期
关键词：
D O I：
10.1109/55.192814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the fabrication and characteristics of the first high-voltage (400 V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm2 for a temperature range of 25 to 200-degrees-C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25-degrees-C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.
引用
收藏
页码：501 / 503
页数：3
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