APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE

被引：46
作者：
CASTAGNE, R
VAPAILLE, A
机构：
来源：
ELECTRONICS LETTERS | 1970年 / 6卷 / 22期
关键词：
D O I：
10.1049/el:19700481
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：691 / +
页数：1
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