COMMENTS ON THE PLASMA ANNEALING MODEL TO EXPLAIN THE DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON

被引：2

作者：

BHATTACHARYYA, A ^{[1
]}

STREETMAN, BG ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1261 / 1261

页数：1

共 50 条

[1] PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON
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[7] DOPANT REDISTRIBUTION BY PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON
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[9] EXCIMER LASER ANNEALING OF ION-IMPLANTED SILICON
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