EVIDENCE OF ONE-DIMENSIONAL EXCITONS IN GAAS V-SHAPED QUANTUM WIRES

被引：36

作者：

RINALDI, R

FERRARA, M

CINGOLANI, R

MARTI, U

MARTIN, D

MORIERGEMOUD, F

RUTERANA, P

REINHART, FK

机构：

[1] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[2] ECOLE POLYTECH FED LAUSANNE,INST MICROSCOPIE ELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.50.11795

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the optical properties of excitons in GaAs quantum wires grown on nonplanar patterned substrates (V-shaped quantum wires) by photoluminescence and magnetophotoluminescence. The experimentally observed transitions are in agreement with the theoretical evaluation of the quantized energy levels based on TEM measurements. The clear evidence of the ny=1 and 2 excitonic recombination in the photoluminescence spectra is exploited to directly measure the anisotropy of the optical matrix elements. © 1994 The American Physical Society.

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页码：11795 / 11800

页数：6

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