REACTION-KINETICS CONTROL IN PREPARATION OF CDTE AND HGCDTE BY HOT-WALL METALORGANIC VAPOR-PHASE EPITAXY

被引：0

作者：

DING, YQ

WEI, GY

PENG, RW

机构：

[1] Chinese Acad of Sciences, Shanghai, China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

CDTE; HGCDTE; METALORGANIC VAPOR PHASE EPITAXY (MOVPE); REACTION KINETICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth rates of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy were studied as functions of growth temperatures and partial pressures of precursors. It is suggested that the growth of CdTe and HgCdTe was controlled by reaction kinetics. The relationship between growth processes and epilayer properties was discussed and high quality epilayers were obtained.

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页码：221 / 224

页数：4

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