ORIGIN OF NONLINEAR GAIN SATURATION IN INDEX-GUIDED INGAASP LASER-DIODES

被引：15

作者：

FRANKENBERGER, R ^{[1
]}

SCHIMPE, R ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spectrum of nonlinear gain saturation of InGaAsP diode lasers with a buried heterostructure is measured by means of modulation spectroscopy. The underlying physical processes are identified through comparison with theoretical spectra. At the laser line, contributions to the coefficient of self-saturation by spectral hole burning (1.6 X 10(-17) cm3) and carrier heating (1.1 X 10(-17) cm3) of comparable magnitude are found.

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页码：2720 / 2722

页数：3

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