INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS

被引：19

作者：

BELL, RL

JAMES, LW

ANTYPAS, GA

EDGECUMBE, J

MOON, RL

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 12期

关键词：

D O I：

10.1063/1.1653794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：513 / +

页数：1

共 8 条

[1] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J].

FISHER, DG ;

ENSTROM, RE ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :371-&

[2]

FISHER DG, 1971, C PHOTOELECTRIC SECO

[3] OPTIMIZATION OF INASXP1-X-CS2O PHOTOCATHODE [J].

JAMES, LW ;

ANTYPAS, GA ;

UEBBING, JJ ;

YEP, TO ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :580-+

[4] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :370-&

[5]

JAMES LW, 1971, GALLIUM ARSENIDE REL, P195

[6] THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES [J].

SOMMER, AH ;

WHITAKER, HH ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :273-&

[7]

SONNENBERG H, 1971, C PHOTOELECTRIC SECO

[8] BEHAVIOR OF CESIUM OXIDE AS A LOW WORK-FUNCTION COATING [J].

UEBBING, JJ ;

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) :4505-+

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