INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .I. THEORY

被引：12

作者：

BENDA, H

DANNHAUSER, F

PORST, A

SPENKE, E

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(67)90056-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1133 / +

页数：1

共 11 条

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[2] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
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SPENKE, E
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
[3] BENDA H, 1967, SOLIDST ELECTRON, V11
[4] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[5] HERLET A, 1964, SIEMENS-Z, V38, P846
[6] HERLET A, 1964, SIEMENS-Z, V38, P843
[7] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS
HOFFMAN, A
SPENKE, E
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 693 - &
[8] INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .2. EXPERIMENT
PORST, A
SCHUSTER, K
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1149 - &
[9] Simplified and advanced Theory of the Boundary Layer Rectifiers
Schottky, W.
[J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592
[10] VOLTAGE STEP AT SWITCHING OF ALLOYED PIN RECTIFIERS
SCHUSTER, K
SPENKE, E
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (11) : 881 - &