STIMULATED EMISSION IN IN1-XGAXP

被引：29

作者：

BURNHAM, RD

HOLONYAK, N

KEUNE, DL

SCIFRES, DR

DAPKUS, PD

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期

关键词：

D O I：

10.1063/1.1653258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：430 / &

共 10 条

[1]

ARCHER RJ, 1970, J ELECTROCHEM SOC, V117, P182

[2]

CRAFORD MG, 1970, J ELECTROCHEM SOC, V117, P199

[3]

HAKKI BW, 1970 EL SOC M LOS AN, P204

[4]

HILSUM C, 1968, P INT C SEMICONDUCTO, V2, P1214

[5] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[6] LASER OPERATION OF CDSE PUMPED WITH A GA(ASP) LASER DIODE [J].

HOLONYAK, N ;

SIRKIS, MD ;

STILLMAN, GE ;

JOHNSON, MR .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08) :1068-&

[7] OPTICALLY PUMPED THIN-PLATELET SEMICONDUCTOR LASERS [J].

JOHNSON, MR ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3977-+

[8] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J].

LORENZ, MR ;

REUTER, W ;

DUMKE, WP ;

CHICOTKA, RJ ;

PETTIT, GD ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :421-&

[9]

LORENZ MR, 1970 P INT C PHYS SE

[10]

RICHMAN D, 1970 AIME EL MAT C N, P14

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