NON-RADIATIVE RECOMBINATION AND LUMINESCENCE IN SILICON

被引：6
|
作者：
PILKUHN, MH
机构：
来源：
JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期
关键词：
D O I：
10.1016/0022-2313(79)90078-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：81 / 87
页数：7
相关论文
共 50 条
  • [1] RADIATIVE AND NON-RADIATIVE RECOMBINATION IN AMORPHOUS SILICON
    ENGEMANN, D
    FISCHER, R
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 458 - 458
  • [2] Non-radiative distant pair recombination in amorphous silicon
    Stachowitz, R
    Schubert, M
    Fuhs, W
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 190 - 196
  • [3] Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon
    Mchedlidze, Teimuraz
    Arguirov, Tzanimir
    Kononchuk, Oleg
    Trushin, Maxim
    Kittler, Martin
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 991 - 995
  • [4] Study of the correlation between radiative and non-radiative recombination channels in silicon
    Acciarri, M
    Cirelli, C
    Pizzini, S
    Binetti, S
    Castaldini, A
    Cavallini, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) : 13223 - 13230
  • [5] Study of the radiative and non-radiative recombination processes at dislocations in silicon by photoluminescence and LBIC measurements
    Pizzini, S
    Binetti, S
    Acciarri, M
    Casati, M
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 117 - 122
  • [6] Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
    Selvidge, Jennifer
    Norman, Justin
    Salmon, Michael E.
    Hughes, Eamonn T.
    Bowers, John E.
    Herrick, Robert
    Mukherjee, Kunal
    APPLIED PHYSICS LETTERS, 2019, 115 (13)
  • [7] NON-RADIATIVE RECOMBINATION IN CHALCOGENIDE GLASSES
    STREET, RA
    SOLID STATE COMMUNICATIONS, 1977, 24 (05) : 363 - 365
  • [8] QUENCHING OF LUMINESCENCE BY NON-RADIATIVE TUNNELLING
    BLUMEN, A
    KLAFTER, J
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (02): : L5 - L8
  • [9] Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems
    Zhang, Pengzhan
    Liu, Xinyu
    Zhang, Ling
    Wang, Danbei
    Wu, Kongpin
    Wang, Sake
    FRONTIERS IN PHYSICS, 2024, 12
  • [10] Non-radiative recombination at reconstructed Si surfaces
    Dittrich, T
    Bitzer, T
    Rada, T
    Timoshenko, VY
    Rappich, J
    SOLID-STATE ELECTRONICS, 2002, 46 (11) : 1863 - 1872
12345