EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY

被引：78
作者：
CARRIERE, B
DEVILLE, JP
机构：
[1] Laboratoire de Minéralogie, ERA 07 du CNRS, Université Louis Pasteur, F-67000 Strasbourg
来源：
SURFACE SCIENCE | 1979年 / 80卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90688-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The oxidation of silicon surfaces has been studied by AES, XPS and LEED. Attention was focussed on the modifications induced in the AES spectra by oxygen adsorption. It has been shown that the fine structure of the silicon LW transition is changed in the early stages of oxidation. Several steps are found: the first and most stable is a SiOx layer where silicon is probably covalently bonded to oxygen. The second is a silica-like overlayer. The study of the oxygen KLL transition which can be either delocalized or quasi-atomic favors these assignments. © 1979.
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收藏
页码：278 / 286
页数：9
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