SILICON DEPLETION LAYER MAGNETOMETER

被引：14

作者：

FLYNN, JB

机构：

来源：

关键词：

D O I：

10.1063/1.1659305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2750 / &

共 9 条

[1]

BROWN CB, 1950, PHYS REV, V76, P1736

[2]

BROWN CB, 1950, ELECTRONICS, V23, P81

[3] TOTAL ACTIVE AREA SILICON PHOTODIODE ARRAY [J].

FLYNN, JB ;

EPSTEIN, JM ;

PALMER, DR ;

EGAN, JV .

[4] A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY [J].

FRY, PW ;

HOEY, SJ .

[5] A SILICON HALL ELEMENT FOR APPLICATION IN AN ANALOG MULTIPLIER [J].

MENGALI, OJ ;

SHILLIDAY, TS .

[6] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J].

MESSIER, J ;

MERLOFLORES, J .

[7]

SMITH RA, 1961, SEMICONDUCTORS, P122

[8]

TRIVEDI PC, 1959, ELECTRONIC RADIO ENG, V36, P368

[9]

1969, ELECTRONIC DESIGN NE, P73