ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA

被引：12

作者：

JINNO, K ^{[1
]}

KINOSHITA, H ^{[1
]}

MATSUMOTO, Y ^{[1
]}

机构：

[1] TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

关键词：

D O I：

10.1149/1.2133541

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1258 / 1262

页数：5

共 12 条

[1]

ABE H, 1974, 6TH P C SOL STAT DEV

[2]

BROCHU M, 1976, ETCHING, P111

[3]

BUTURI O, 1975, J JPN SOC APPL S287, V44

[4]

CLARK HA, 1976, SOLID STATE TECHNOL, V19, P51

[5] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

[6] NEW CHEMICAL DRY ETCHING [J].

HORIIKE, Y ;

SHIBAGAKI, M .

[7]

JACOB A, 1976, SOLID STATE TECHNOL, V70, P1919

[8]

JINNO K, 1976, DENKI KAGAKU, V44, P204

[9]

REINBERG AR, 1976, ETCHING

[10] ETCH RATES OF DOPED OXIDES IN SOLUTIONS OF BUFFERED HF [J].

TENNEY, AS ;

GHEZZO, M .