Methodology of analyzing the CdSe semiconductor quantum dots parameters

被引：5
|
作者：
Mikhailov, A., I [1 ]
Kabanov, V. F. [1 ]
Glukhovskoy, E. G. [1 ]
Shishkin, M., I [1 ]
Gavrikov, M., V [1 ]
机构：
[1] Saratov NG Chernyshevskii State Univ, Dept Nano & Biomed Technol, Astrakhanskaya 83, Saratov 410012, Russia
来源：
NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS | 2018年 / 9卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
quantum dots; cadmium selenide; differential tunneling current-voltage characteristics; energy spectrum;
D O I：
10.17586/2220-8054-2018-9-4-464-467
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Direct methods (using a laser particle size analyzer) and indirect (from the analysis of spectral characteristics and differential normalized tunnel CVC) methods of CdSe QD size estimation allowed determination of the size (4 - 5 nm) and shown good qualitative and quantitative agreement of the results with an error of less than 10 %. It is concluded that the tunnel differential CVC analysis is an effective method for express measurement that can be used in quantum-size object investigations.
引用
收藏
页码：464 / 467
页数：4
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