INTERFACE PROPERTIES OF A VACUUM-EVAPORATED-SIOX(1-2)-GAAS SYSTEM DETECTED BY SURFACE ACOUSTIC-WAVE

被引：1
作者：
HIRAMATSU, T
KURODA, S
GOTO, H
KIMATA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 04期
关键词：
D O I：
10.1143/JJAP.19.757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：757 / 758
页数：2
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[1]   SEMICONDUCTOR SURFACE STUDY BY TRANSVERSE ACOUSTOELECTRIC VOLTAGE USING SURFACE ACOUSTIC-WAVES [J].
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[2]   C-V CHARACTERISTICS OF "AL-VACUUM-EVAPORATED-SIOX(1-2)-GAAS SYSTEMS [J].
HIRAMATSU, T ;
GOTO, H ;
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HIROFUJI, Y ;
KIMATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :853-854
[3]   ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION [J].
SAWADA, T ;
HASEGAWA, H .
ELECTRONICS LETTERS, 1976, 12 (18) :471-472
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