OPTIMIZATION AND CHARACTERIZATION OF 780 NM ALGAAS QUANTUM-WELL DFB LASER-DIODES

被引：3

作者：

HIRATA, T ^{[1
]}

SUEHIRO, M ^{[1
]}

MAEDA, M ^{[1
]}

YAMADA, N ^{[1
]}

HIHARA, M ^{[1
]}

HOSOMATSU, H ^{[1
]}

机构：

[1] OPT MEASUREMENT TECHNOL DEV CO LTD, CENT RES LAB, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Characteristic temperature; DFB; EB lithography; GaAs/AIGaAs; GRIN-SCH; LD; MOVPE; Quantum well; Spectral linewidth;

D O I：

10.1143/JJAP.29.L1829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs quantum well DFB laser diodes with a wavelength of 780 nm have been fabricated using two-step MOVPE growth and EB lithography. Comparing several quantum well structures emitting 780 nm wavelength, the optimum structure was determined to be about 5 nm thick with a 0.06 Al mole fraction where low threshold current and low internal loss are realized. The GRIN-SCH structure with a carrier blocking layer was also utilized to improve the characteristic temperature of a two-step-growth laser diode. The resulting threshold current, characteristic temperature and spectral linewidth are 11 mA, 244 K and 760 kHz, respectively. © 1990 IOP Publishing Ltd.

引用

页码：L1829 / L1832

页数：4

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