NEGATIVE RESISTANCE FROM VELOCITY-SATURATED NONUNIFORM SEMICONDUCTOR SAMPLES

被引:3
作者
LUNDSTROM, I
WIERICH, RL
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D O I
10.1049/el:19710141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:209 / +
页数:1
相关论文
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[2]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
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[3]  
WESSELBERG T, 1968, AE99 NORW I TECHN EL
[4]  
WIERCH RL, 1969, INSTABILITIES DUE VE
[5]   TRANSISTOR TRANSIT-TIME OSCILLATOR [J].
WRIGHT, GT .
ELECTRONICS LETTERS, 1967, 3 (06) :234-+