HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引:16
作者
CHEN, HZ
PASLASKI, J
YARIV, A
MORKOC, H
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D O I
10.1063/1.99378
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O59 [应用物理学];
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页码:605 / 606
页数:2
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共 10 条
[1]  
Chen H.-L., UNPUB
[2]   CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE [J].
CHEN, HZ ;
GHAFFARI, A ;
WANG, H ;
MORKOC, H ;
YARIV, A .
OPTICS LETTERS, 1987, 12 (10) :812-813
[3]   LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100) [J].
CHEN, HZ ;
GHAFFARI, A ;
WANG, H ;
MORKOC, H ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1320-1321
[4]  
CHEN HZ, 1987, JUN GAAS SI WORKSH M
[5]  
CHEN HZ, 1988, RES DEV JAN
[6]  
CHEN HZ, 1987, SEMICOND INT, V10, P22
[7]  
CHEN HZ, 1987, PHOTONICS SPECTRA, V21, P36
[8]  
LAU KY, 1985, SEMICONDUCT SEMIMET, V22, P69
[9]   AN IMPROVED TECHNIQUE FOR FABRICATING HIGH QUANTUM EFFICIENCY RIDGE WAVE-GUIDE ALGAAS/GAAS QUANTUM-WELL LASERS [J].
SANADA, T ;
KUNO, M ;
WADA, O .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1443-1444