STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES

被引：240

作者：

LANDER, JJ

GOBELL, GW

MORRISON, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.1702734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2298 / +

页数：1

共 10 条

[1]

FARNSWORTH HE, 1962, C NY ACAD CLEAN SURF

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[7] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&

[8] IMPROVED DESIGN AND METHOD OF OPERATION OF LOW ENERGY ELECTRON DIFFRACTION EQUIPMENT [J].

LANDER, JJ ;

MORRISON, J ;

UNTERWALD, F .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (07) :782-+

[9] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

[10]

WANNIER GH, TO BE PUBLISHED

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