PULSED JET EPITAXY OF III-V COMPOUNDS

An atomic layer epitaxial technique called pulsed-jet expitaxy has been developed for III-V compound crystals using metalorganic and hydride sources. The growth rate was clearly self-limited under a wide range of growth conditions. Epitaxial layers of high purity without carbon contamination could be grown. Fine patterns below 1.0-mu-m were selectively grown with good morphology. A uniform epitaxial layer grown over a 2-inch wafer had a thickness variation within 1.0% Strained-superlattices (GaAs)(m)(GaP)(n) were grown and exhibited an ideal self-limiting mechanism at 500-degrees-C. Structural analysis using X-ray rocking curve and Raman scattering measurements showed that superlattice growth was completely controlled within one atomic layer even for the monolayer superlattice (GaAs)1(GaP)1. Optical studies by photoluminescence and reflectance measurements suggest that the monolayer superlattice had a direct energy-band structure.