HOPPING CONDUCTION IN INTERMEDIATELY DOPED SEMICONDUCTORS

被引：0

作者：

DVURECHENSKII, AV

DRAVIN, VA

YAKIMOV, AI

机构：

来源：

FIZIKA TVERDOGO TELA | 1988年 / 30卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：401 / 406

页数：6

共 50 条

[1] HOPPING CONDUCTION IN HEAVILY DOPED SEMICONDUCTORS
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[3] HOPPING CONDUCTION IN HEAVILY DOPED SEMICONDUCTORS.
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[10] INFLUENCE OF IMPURITY CONCENTRATION ON HOPPING CONDUCTION IN SEMICONDUCTORS
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