INTRASUBBAND EXCITATIONS AND SPIN-SPLITTING ANISOTROPY IN GAAS MODULATION-DOPED QUANTUM-WELLS

被引：47

作者：

RICHARDS, D ^{[1
]}

JUSSERAND, B ^{[1
]}

PERIC, H ^{[1
]}

ETIENNE, B ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,SCI GRP,CNRS,F-92220 BAGNEUX,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.47.16028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present Raman-scattering measurements of intrasubband excitations in, the quasi-two-dimensional electron gas (2DEG) of an n-type modulation-doped GaAs/Al0.33Ga0.67As quantum well. In depolarized spectra we observe spin-flip single-particle excitations between the spin-split conduction bands. Measurements with the Raman wave-vector along different crystallographic orientations allow us to probe the anisotropy of the spin splitting, caused by the lack of inversion symmetry in GaAs. We discuss theoretical descriptions of the spin splitting in a 2DEG and compare calculated and measured Raman spectra. In polarized spectra we observe scattering with comparable intensity from non-spin-flip single-particle excitations and plasmons. In order to describe correctly the plasmon dispersion we have to take into account the effects on the Coulomb interaction of image charges in the sample surface.

引用

页码：16028 / 16031

页数：4

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