EFFECT OF CARRIER CONFINEMENT ON THE LASER-INDUCED ETCHING OF GAAS/ALGAAS HETEROSTRUCTURES

被引:12
|
作者
RUBERTO, MN [1 ]
WILLNER, AE [1 ]
PODLESNIK, DV [1 ]
OSGOOD, RM [1 ]
机构
[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027
关键词
D O I
10.1063/1.101696
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:984 / 986
页数:3
相关论文
共 50 条
  • [31] Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures
    A. A. Marmalyuk
    A. Yu. Andreev
    V. P. Konyaev
    M. A. Ladugin
    E. I. Lebedeva
    A. S. Meshkov
    A. N. Morozyuk
    S. M. Sapozhnikov
    A. I. Danilov
    V. A. Simakov
    K. Yu. Telegin
    I. V. Yarotskaya
    Semiconductors, 2014, 48 : 115 - 119
  • [32] Laser emitters (λ=808 nm) based on AlGaAs/GaAs heterostructures
    Marmalyuk, A. A.
    Andreev, A. Yu.
    Konyaev, V. P.
    Ladugin, M. A.
    Lebedeva, E. I.
    Meshkov, A. S.
    Morozyuk, A. N.
    Sapozhnikov, S. M.
    Danilov, A. I.
    Simakov, V. A.
    Telegin, K. Yu.
    Yarotskaya, I. V.
    SEMICONDUCTORS, 2014, 48 (01) : 115 - 119
  • [33] SYSTEMATICS OF LASER OPERATION IN GAAS/ALGAAS MULTIQUANTUM WELL HETEROSTRUCTURES
    ZIELINSKI, E
    SCHWEIZER, H
    HAUSSER, S
    STUBER, R
    PILKUHN, MH
    WEIMANN, G
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 969 - 976
  • [34] SMITH-PURCELL EFFECT IN GAAS/ALGAAS HETEROSTRUCTURES
    GORNIK, E
    BOXLEITNER, W
    ROSSKOPF, V
    HAUSER, M
    WIRNER, C
    WEIMANN, G
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (04) : 399 - 404
  • [35] Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
    Moo-Sung Kim
    Cheon Lee
    Se Ki Park
    Won Chel Choi
    Eun Kyu Kim
    Seong-Il Kim
    Byoung Sung Ahn
    Suk-Ki Min
    Journal of Electronic Materials, 1997, 26 : 436 - 439
  • [36] CONTROL OF THE LASER-INDUCED RELIEF SPECTRUM OF GAAS SURFACE UNDER PHOTOCHEMICAL ETCHING
    PANCHENKO, VY
    POPOV, VK
    SEMINOGOV, VN
    KHUDOBENKO, AI
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1992, 56 (04): : 91 - 99
  • [37] STRAIN-INDUCED LATERAL CONFINEMENT OF EXCITONS IN GAAS/ALGAAS QUANTUM-WELL BY CHEMICAL DRY ETCHING
    TAN, IH
    LISHAN, DG
    MIRIN, R
    JAYARAMAN, V
    YASUDA, T
    PRATER, CB
    HU, EL
    BOWERS, JE
    HANSMA, PK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3498 - 3501
  • [38] Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
    Kim, MS
    Lee, C
    Park, SK
    Choi, WC
    Kim, EK
    Kim, SI
    Ahn, BS
    Min, SK
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (05) : 436 - 439
  • [39] Shape of emission spectrum diffracted on laser-induced lattices in GaAs/AlGaAs quantum holes
    Gorshunov, AG
    Grigorev, VN
    Grinev, VI
    Litvinenko, KL
    Lysenko, VG
    Khvam, IM
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1996, 109 (02): : 665 - 673
  • [40] Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser
    J. Genest
    J.J. Dubowski
    V. Aimez
    Applied Physics A, 2007, 89 : 423 - 426