共 50 条
[42]
COMMUTATION EFFECT IN UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .3.
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1986, 20 (02)
:139-142
[43]
Electron Mobility in Enhanced N-type Silicon Nanowire MOSFET
[J].
2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2,
2009,
:1112-+
[44]
IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN N-TYPE SILICON
[J].
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY,
1979, 24 (01)
:18-19
[45]
An Etchant for Delineation of Flow Pattern Defects in Heavily Doped n-type Silicon Wafers
[J].
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012),
2012, 44 (01)
:751-757
[46]
PIEZORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM
[J].
PHYSICAL REVIEW,
1958, 111 (03)
:798-802
[49]
INFLUENCE OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF N-TYPE SILICON HEAVILY DOPED WITH OXYGEN
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1971, 4 (12)
:1953-&