MODELING FOR ELECTRON-TRANSPORT IN ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES

被引：27

|

作者：

TOMIZAWA, M

FURUTA, T

YOKOYAMA, K

YOSHII, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2380 / 2385

页数：6

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