THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES

被引：28

作者：

DIAL, JE

GONG, RE

FORDEMWALT, JN

机构：

[1] Microelectronics Division, Philco-Ford Corporation, Santa Clara, California

来源：

关键词：

D O I：

10.1149/1.2411162

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：326 / +

页数：1

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[1]

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[2]

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MURRAY, LA ;

GOLDSMITH, N .

[4] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

[5]

Tolansky S., 1948, MULTIPLE BEAM INTERF

[6]

VALLETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402

[7] PROPERTIES OF EVAPORATED THIN FILMS OF SIO [J].

YORK, DB .