AN AC CONDUCTANCE TECHNIQUE FOR MEASURING SELF-HEATING IN SOI MOSFETS

被引：51

作者：

TU, RH

WANN, C

KING, JC

KO, PK

HU, CM

机构：

[1] Electronics Research Laboratory, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 02期

关键词：

D O I：

10.1109/55.386025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new technique for isolating the electrical behavior of an SOI MOSFET's from the self-heating effect using an ac conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SOI device. We present measurement results from SOI MOSFET's that demonstrate that heating can indeed be significant in SOI devices.

引用

页码：67 / 69

页数：3

共 7 条

[1]

BERGER M, 1991 IEEE INT SOI C, P24

[2]

CALVIGLIA A, 1993, IEEE ELECTRON DEVICE, V14, P133

[3]

LEE M, 1993 IEEE INT SOI C, P150

[4] ELECTRICAL TRANSIENT STUDY OF NEGATIVE-RESISTANCE IN SOI MOS-TRANSISTORS [J].