POSITRON BINDING-ENERGIES AND SPECIFIC TRAPPING RATES FOR MONOVACANCIES IN GAAS AND INSB

被引：12

作者：

DANNEFAER, S

KERR, D

机构：

[1] Physics Department, University of Winnipeg, Winnipeg

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.9142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron measurements on as-grown GaAs and InSb in the temperature range 30-800 K have resulted in an experimental determination of the positron binding energies and absolute.specific trapping rate for monovacancies. In the case of GaAs the binding energy is found to be 0.30+/-0.02 eV and the absolute specific trapping rate to be (1.0+/-0.2)X10(-17) ns-1 cm3. In the case of InSb the binding energy is constant (0.28+/-0.02 eV) below approximately 540 K but increases to 0.60+/-0.05 eV close to the melting point (823 K).

引用

页码：9142 / 9145

页数：4

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