THE SATURATION OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：15

作者：

ISOMURA, M

HATA, N

WAGNER, S

机构：

[1] Department of Electrical Engineering, Princeton University Princeton

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80096-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the temperature and intensity dependence of the saturation of the light-induced defect density, established by high-intensity Kr+ laser illumination. The saturation value of the light-induced defect density (N(sat)) is independent of temperature below about 90-degrees-C. Above 90-degrees-C N(sat) drops with increasing temperature. This behavior can be explained by the exhaustion of a limited number of defect sites, coupled with a thermal annealing process.

引用

页码：223 / 226

页数：4

共 20 条

[1]

HATA N, 1990, MATER RES SOC SYMP P, V192, P285, DOI 10.1557/PROC-192-285

[2] DEPOSITION-INDUCED DEFECT PROFILES IN AMORPHOUS HYDROGENATED SILICON [J].

HATA, N ;

WAGNER, S ;

ICABARROCAS, PR ;

FAVRE, M .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2448-2450

[3]

HATA N, 1991, IN PRESS P INT M STA

[4] WHAT CAN WE LEARN FROM THE SATURATION OF LIGHT-INDUCED DEFECTS IN AMORPHOUS HYDROGENATED SILICON [J].

ISOMURA, M ;

XU, X ;

WAGNER, S .

SOLAR CELLS, 1991, 30 (1-4) :177-191

[5]

ISOMURA M, 1991, MAT RES SOC S P, V219

[6]

ISOMURA M, 1991, IN PRESS P INT M STA

[7]

MAHAN AH, 1991, IN PRESS P INT M STA

[8] SATURATION OF OPTICAL DEGRADATION IN A-SI-H FILMS WITH DIFFERENT MORPHOLOGIES [J].

OHAGI, H ;

NAKATA, JI ;

MIYANISHI, A ;

IMAO, S ;

JEONG, M ;

SHIRAFUJI, J ;

FUJIBAYASHI, K ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2245-L2247

[9] CREATION AND SATURATION OF LIGHT-INDUCED DEFECTS IN A-SI-H [J].

OHSAWA, M ;

HAMA, T ;

AKASAKA, T ;

SAKAI, H ;

ISHIDA, S ;

UCHIDA, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :91-94

[10]

OHSAWA M, 1985, JPN J APPL PHYS, V24, P838

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