MODULATION ELLIPSOMETRY - A NEW TECHNIQUE FOR THE CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS AND COMPLEX SEMICONDUCTOR STRUCTURES

被引：9

作者：

ZETTLER, JT ^{[1
]}

DITTRICH, T ^{[1
]}

SCHROTTKE, L ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENT INST ELEKTRONEN PHYS,O-1199 BERLIN,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 01期

关键词：

D O I：

10.1002/pssa.2211190160

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K91 / K95

页数：5

共 7 条

[1]

AZZAM RMA, 1972, ELLIPSOMETRY POLARIZ

[2]

Born M., 1964, PRINCIPLES OPTICS

[3] ON THE MECHANISMS OF PHOTOREFLECTANCE IN MULTIPLE QUANTUM WELLS [J].

ENDERLEIN, R ;

JIANG, D ;

TANG, Y .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 145 (01) :167-180

[4] APPLICATION OF SPECTROSCOPIC ELLIPSOMETRY TO COMPLEX SAMPLES [J].

FREEOUF, JL .

GLEMBOCKI, OJ ;

SHANABROOK, BV ;

BEARD, WT .

[6]

Merkel K. G., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V946, P105, DOI 10.1117/12.947418

[7]

MERKEL KG, 1988, SEMICONDUCTOR TECHNO, V3, P105