FREE CARRIER ABSORPTION IN SILICON

被引：147

作者：

SCHRODER, DK

THOMAS, RN

SWARTZ, JC

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1978年 / 13卷 / 01期

关键词：

D O I：

10.1109/JSSC.1978.1051012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：180 / 187

页数：8

共 14 条

[1] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J].

GARDNER, EE ;

KAPPALLO, W ;

GORDON, CR .

APPLIED PHYSICS LETTERS, 1966, 9 (12) :432-&

[2] FREE CARRIER ABSORPTION IN P-TYPE SILICON [J].

HARA, H ;

NISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (06) :1222-&

[3]

HOUSTON DE, 1976, TECHNICAL DIGEST 197, P504

[4] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J].

HOWARTH, LE ;

GILBERT, JF .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :236-&

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

[7] IMPURITY CONDUCTION IN SILICON [J].

RAY, RK ;

FAN, HY .

PHYSICAL REVIEW, 1961, 121 (03) :768-&

[8] SILICON OPTICAL CONSTANTS IN INFRARED [J].

SCHUMANN, PA ;

KEENAN, WA ;

TONG, AH ;

GEGENWARTH, HH ;

SCHNEIDER, CP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :145-+

[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J].

SCHUMANN, PA ;

PHILLIPS, RP .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :943-&

[10] EXTRINSIC SILICON DETECTORS FOR 3-5 AND 8-14 MUM [J].

SCLAR, N .

INFRARED PHYSICS, 1976, 16 (04) :435-448

← 1 2 →