APPROACH TO PROBLEM OF DISPLACEMENT ENERGY THRESHOLD IN SEMICONDUCTORS

[1] CHENG LJ, 1974, P IEEE, V62, P1208

[2] LOOK DC, 1974, RADIAT EFF, V2, P229

[3] OEN OS, 1968, RADIATION EFFECTS SE, P264

[4] PHILLIPS JC, 1970, P INT C PHYS SEMICON

[5] URLI NB, 1977, INT S SOLID STATE PH

[6] ENTHALPY OF VACANCY MIGRATION IN SI AND GE [J]. PHYSICAL REVIEW B, 1974, 10 (04) : 1482 - 1505

[7] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 419 - 422

[8] ESTIMATION OF BOND-BENDING FORCE CONSTANTS IN TETRAHEDRAL SEMICONDUCTORS AND THEIR VARIATION WITH PRESSURE OBTAINED FROM SPECTROSCOPIC DATA [J]. PHYSICAL REVIEW B, 1974, 10 (10) : 4222 - 4227

[9] VANVECHTEN JA, COMMUNICATION

[10] VANVECHTEN JA, 1977, P INT C RADIATION EF

[1] CHENG LJ, 1974, P IEEE, V62, P1208

[2] LOOK DC, 1974, RADIAT EFF, V2, P229

[3] OEN OS, 1968, RADIATION EFFECTS SE, P264

[4] PHILLIPS JC, 1970, P INT C PHYS SEMICON

[5] URLI NB, 1977, INT S SOLID STATE PH

[6] ENTHALPY OF VACANCY MIGRATION IN SI AND GE [J]. PHYSICAL REVIEW B, 1974, 10 (04) : 1482 - 1505

[7] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 419 - 422

[8] ESTIMATION OF BOND-BENDING FORCE CONSTANTS IN TETRAHEDRAL SEMICONDUCTORS AND THEIR VARIATION WITH PRESSURE OBTAINED FROM SPECTROSCOPIC DATA [J]. PHYSICAL REVIEW B, 1974, 10 (10) : 4222 - 4227

[9] VANVECHTEN JA, COMMUNICATION

[10] VANVECHTEN JA, 1977, P INT C RADIATION EF