STRUCTURE, STABILITY, AND ORIGIN OF (2 X N) PHASES ON SI(100)

被引：84

作者：

MARTIN, JA ^{[1
]}

SAVAGE, DE ^{[1
]}

MORITZ, W ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.56.1936

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1936 / 1939

页数：4

共 11 条

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[3]

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[4]

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NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1985, 54 (08) :815-818

[7]

Pandey K. C., 1985, Proceedings of the 17th International Conference on the Physics of Semiconductors, P55

[8] ELECTRON-DIFFRACTION STUDY OF STRUCTURE OF SILICON (100) [J].

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NGOC, TC ;

WEBB, MB .

SURFACE SCIENCE, 1978, 75 (02) :287-315

[9] A METHOD FOR THE CALCULATION OF LEED ANGULAR PROFILES TO ESTIMATE OVERLAYER SPACINGS AND ISLAND SIZE DISTRIBUTIONS [J].

SALONER, D ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :935-938

[10]

SALONER D, UNPUB

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