HIGH-SPEED RESPONSE CHARACTERISTICS OF GAAS OPTOELECTRONIC INTEGRATED RECEIVERS

被引：7
作者：
HAMAGUCHI, H
MAKIUCHI, M
WADA, O
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 09期
关键词：
D O I：
10.1049/el:19860340
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：501 / 502
页数：2
相关论文
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[5]   ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE [J].
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[7]  
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