OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS

被引:76
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LUBBERTS, G
BURKEY, BC
MOSER, F
TRABKA, EA
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10.1063/1.328681
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O59 [应用物理学];
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页码:6870 / 6878
页数:9
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共 23 条
[1]  
Anagnostopoulos C., 1980, Proceedings of the 1980 Custom Integrated Circuits Conference, P78
[2]   TRANSMITTANCE OF AIR-SIO2-POLYSILICON-SIO2-SI STRUCTURES [J].
ANAGNOSTOPOULOS, C ;
SADASIV, G .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (03) :177-179
[3]   INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].
BALKANSKI, M ;
AZIZA, A ;
AMZALLAG, E .
PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+
[4]  
BLATT FJ, 1968, PHYSICS ELECTRONIC C, pCH10
[5]   QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY [J].
BROWN, RW ;
CHAMBERLAIN, SG .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :675-685
[6]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[7]  
DYCK RH, 1977, AUG P SPIE SOLID STA, V116, P19
[8]   OPTICAL INTERFERENCE METHOD FOR APPROXIMATE DETERMINATION OF REFRACTIVE-INDEX AND THICKNESS OF A TRANSPARENT LAYER [J].
GOODMAN, AM .
APPLIED OPTICS, 1978, 17 (17) :2779-2787
[9]  
Heavens O.S., 1955, OPTICAL PROPERTIES T
[10]   DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J].
HOWARTH, LE ;
GILBERT, JF .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :236-&