PROPAGATION OF THERMAL PERTURBATIONS IN PHOTOINJECTED PLASMA IN SEMICONDUCTORS - 2ND SOUND-WAVES

被引:1
作者
VASCONCELLOS, AR
LUZZI, R
机构
[1] Instituto de Fisica Gleb Wataghin Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, SP
基金
巴西圣保罗研究基金会;
关键词
D O I
10.1016/0038-1098(94)90157-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The propagation of thermal perturbations in the carrier system in a highly photoexcited plasma in direct-gap polar semiconductors is considered. In a hydrodynamic approach based on the so-called informational statistical thermodynamics, an equation of evolution for the energy flux that extends the usual Fourier's constitutive equation is derived. In conjunction with the equation of evolution for the energy, a hyperbolic (telegraphist like) equation of evolution for the quasi-temperature is derived, that implies in damped wave propagation, corresponding to propagation of second sound. Numerical calculations appropriate for GaAs are presented, and the transition from wave to diffusive motion and the expected Raman spectrum are discussed.
引用
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页码:307 / 310
页数:4
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