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ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES
被引:9
作者
:
NEAMEN, DA
论文数:
0
引用数:
0
h-index:
0
NEAMEN, DA
GRANNEMANN, WW
论文数:
0
引用数:
0
h-index:
0
GRANNEMANN, WW
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1971年
/ 14卷
/ 12期
关键词
:
D O I
:
10.1016/0038-1101(71)90121-3
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1319 / +
页数:1
相关论文
共 6 条
[1]
BURD JW, 1969, T METALL SOC AIME, V245, P571
[2]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
[J].
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3212
-&
[3]
GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER
[J].
COWLEY, M
论文数:
0
引用数:
0
h-index:
0
COWLEY, M
;
HEFFNER, H
论文数:
0
引用数:
0
h-index:
0
HEFFNER, H
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(01)
:255
-&
[4]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:329
-&
[5]
PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES
[J].
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford, CA
NANNICHI, Y
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford, CA
PEARSON, GL
.
SOLID-STATE ELECTRONICS,
1969,
12
(05)
:341
-&
[6]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE
[J].
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
;
AMICK, JA
论文数:
0
引用数:
0
h-index:
0
AMICK, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
:724
-&
←
1
→
共 6 条
[1]
BURD JW, 1969, T METALL SOC AIME, V245, P571
[2]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
[J].
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3212
-&
[3]
GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER
[J].
COWLEY, M
论文数:
0
引用数:
0
h-index:
0
COWLEY, M
;
HEFFNER, H
论文数:
0
引用数:
0
h-index:
0
HEFFNER, H
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(01)
:255
-&
[4]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:329
-&
[5]
PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES
[J].
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford, CA
NANNICHI, Y
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford, CA
PEARSON, GL
.
SOLID-STATE ELECTRONICS,
1969,
12
(05)
:341
-&
[6]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE
[J].
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
;
AMICK, JA
论文数:
0
引用数:
0
h-index:
0
AMICK, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
:724
-&
←
1
→