ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES

被引:9
作者
NEAMEN, DA
GRANNEMANN, WW
机构
关键词
D O I
10.1016/0038-1101(71)90121-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1319 / +
页数:1
相关论文
共 6 条
[1]  
BURD JW, 1969, T METALL SOC AIME, V245, P571
[2]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[3]   GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER [J].
COWLEY, M ;
HEFFNER, H .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) :255-&
[5]   PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES [J].
NANNICHI, Y ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :341-&
[6]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].
TIETJEN, JJ ;
AMICK, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&